Substrat
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy kelas Penelitian ketebalan 500um
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate
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8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
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Diameter 300x1.0mmt Ketebalan Sapphire Wafer C-Plane SSP/DSP
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8 inch 200mm Sapphire substrate wafer safir ketebalan tipis 1SP 2SP 0.5mm 0.75mm
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8 inch SiC silikon karbida wafer 4H-N tipe 0.5mm kelas produksi kelas riset khusus substrat dipoles
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HPSI SiC wafer dia: 3 inch ketebalan: 350um± 25 µm kanggo Power Electronics
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Kristal tunggal Al2O3 99.999% Dia200mm wafer safir 1.0mm 0.75mm ketebalan
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156mm 159mm 6 inch Sapphire Wafer kanggo carrierC-Plane DSP TTV
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C/A/M sumbu 4 inch safir wafer kristal tunggal Al2O3, SSP DSP kekerasan tinggi substrat safir
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-jinis SiC substrate SiC wafer Dia2inch produk anyar