SiC
-
12 inch SIC substrate silikon karbida kelas utama diameter 300mm ukuran gedhe 4H-N Cocog kanggo daya dhuwur piranti dissipation panas
-
HPSI SiC wafer dia: 3 inch ketebalan: 350um± 25 µm kanggo Power Electronics
-
8 inch SiC silikon karbida wafer 4H-N tipe 0.5mm kelas produksi kelas riset khusus substrat dipoles
-
3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
-
P-jinis SiC substrate SiC wafer Dia2inch produk anyar
-
8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
-
2 Inch 6H-N Silicon Carbide Substrat Sic Wafer Ganda Dipoles Konduktif Prime Grade Mos Grade
-
SiC Epitaxial Wafer kanggo Piranti Daya - 4H-SiC, N-jinis, Kapadhetan Cacat Kurang
-
4H-N Tipe SiC Epitaxial Wafer - Tegangan Dhuwur, Aplikasi Frekuensi Dhuwur
-
SiC ceramic end effector handing arm for wafer carring
-
SiC piring keramik / tray kanggo wafer wafer 4inch 6inch kanggo ICP
-
3 inch Kemurnian Tinggi (Undoped) Silicon Carbide Wafer Semi-Insulating Sic Substrat (HPSl)