Produk
-
4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy Research grade 500um ketebalan
-
4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate
-
12 inch SIC substrate silikon karbida kelas utama diameter 300mm ukuran gedhe 4H-N Cocog kanggo daya dhuwur piranti dissipation panas
-
Diameter 300x1.0mmt Ketebalan Sapphire Wafer C-Plane SSP/DSP
-
HPSI SiC wafer dia: 3 inch ketebalan: 350um± 25 µm kanggo Power Electronics
-
8 inch SiC silikon karbida wafer 4H-N tipe 0.5mm kelas produksi kelas riset khusus substrat dipoles
-
8 inch 200mm Sapphire substrate wafer safir ketebalan tipis 1SP 2SP 0.5mm 0.75mm
-
Kristal tunggal Al2O3 99.999% Dia200mm wafer safir 1.0mm 0.75mm ketebalan
-
156mm 159mm 6 inch Sapphire Wafer kanggo operator C-Plane DSP TTV
-
C/A/M sumbu 4 inch safir wafer kristal tunggal Al2O3, SSP DSP kekerasan tinggi substrat safir
-
3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
-
P-jinis SiC substrate SiC wafer Dia2inch produk anyar