SiC
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12 inch SIC substrate silikon karbida kelas utama diameter 300mm ukuran gedhe 4H-N Cocog kanggo daya dhuwur piranti dissipation panas
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8 inch SiC silikon karbida wafer 4H-N tipe 0.5mm kelas produksi kelas riset khusus substrat dipoles
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HPSI SiC wafer dia: 3 inch ketebalan: 350um± 25 µm kanggo Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-jinis SiC substrate SiC wafer Dia2inch produk anyar
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8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
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2 Inch 6H-N Silicon Carbide Substrat Sic Wafer Ganda Dipoles Konduktif Prime Grade Mos Grade
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Silicon Carbide (SiC) Substrat Kristal Tunggal – Wafer 10×10mm
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer kanggo MOS utawa SBD
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SiC Epitaxial Wafer kanggo Piranti Daya - 4H-SiC, N-jinis, Kapadhetan Cacat Kurang
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4H-N Tipe SiC Epitaxial Wafer Tegangan Dhuwur Frekuensi Dhuwur
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3 inch Kemurnian Tinggi (Undoped) Silicon Carbide Wafer Semi-Insulating Sic Substrat (HPSl)