SiC
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy kelas Penelitian ketebalan 500um
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate
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8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
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HPSI SiC wafer dia: 3 inch ketebalan: 350um± 25 µm kanggo Power Electronics
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8 inch SiC silikon karbida wafer 4H-N tipe 0.5mm kelas produksi kelas riset khusus substrat dipoles
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-jinis SiC substrate SiC wafer Dia2inch produk anyar
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2 Inch 6H-N Silicon Carbide Substrat Sic Wafer Ganda Dipoles Konduktif Prime Grade Mos Grade
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SiC silikon karbida wafer SiC wafer 4H-N 6H-N HPSI（Kemurnian tinggi Semi-Isolasi ） 4H/6H-P 3C -n tipe 2 3 4 6 8inci kasedhiya
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2 inch Sic silicon carbide substrate 6H-N Tipe 0.33mm 0.43mm polishing dua sisi konduktivitas termal dhuwur konsumsi daya rendah
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SiC substrate 3inch 350um kekandelan HPSI jinis Prime Grade Dummy kelas
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Silicon Carbide SiC Ingot 6inch tipe N Dummy/Ketebalan kelas prima bisa disesuaikan