SiC
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12 inch SIC substrate silikon karbida kelas utama diameter 300mm ukuran gedhe 4H-N Cocog kanggo daya dhuwur piranti dissipation panas
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8 inch SiC silikon karbida wafer 4H-N tipe 0.5mm kelas produksi kelas riset khusus substrat dipoles
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HPSI SiC wafer dia: 3 inch ketebalan: 350um± 25 µm kanggo Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-jinis SiC substrate SiC wafer Dia2inch produk anyar
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8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
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2 Inch 6H-N Silicon Carbide Substrat Sic Wafer Ganda Dipoles Konduktif Prime Grade Mos Grade
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HPSI SiC Wafer ≥90% Transmittance Optical Grade kanggo Kacamata AI/AR
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Substrat Semi-Insulating Silicon Carbide (SiC) Kemurnian Tinggi Kanggo Kacamata Ar
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Wafer Epitaxial 4H-SiC kanggo MOSFET Tegangan Tinggi Ultra (100–500 μm, 6 inci)
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SICOI (Silicon Carbide ing Insulator) Wafer SiC Film ON Silicon
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Silicon Carbide (SiC) Substrat Kristal Tunggal – Wafer 10×10mm