Substrat
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Substrat SiC 3inch Dia76.2mm HPSI Prime Research lan kelas Dummy
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4H-semi HPSI 2inch SiC substrate wafer Produksi Dummy Research kelas
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Wafer SiC 2 inci 6H utawa 4H Substrat SiC Semi-Insulating Diameter 50.8mm
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Substrat Safir Elektroda lan Substrat LED Wafer C-bidang
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Dia101.6mm 4inch M-bidang Sapphire Substrat Wafer LED Substrat Ketebalan 500um
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Diameter 50.8×0.1/0.17/0.2/0.25/0.3mmt Substrat Wafer Sapphire Epi-ready DSP SSP
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8 inch 200mm Sapphire Wafer Carrier Subsrate 1SP 2SP 0.5mm 0.75mm
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4 inch kemurnian dhuwur Al2O3 99.999% wafer substrat Sapphire Dia101.6 × 0.65mmt kanthi Panjang Datar Utama
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3 inch 76.2mm 4H-Semi SiC substrat wafer Silicon Carbide Wafer SiC Semi-menghina
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2 inch 50.8mm Silicon Carbide SiC Wafer Doped Si N-jenis Riset Produksi lan kelas Dummy
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2 inch 50.8mm Sapphire Wafer C-Pesawat M-pesawat R-pesawat A-pesawat
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2 inch 50.8mm Sapphire Wafer C-Pesawat M-pesawat R-pesawat A-pesawat Ketebalan 350um 430um 500um