Substrat
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Substrat SiC P-type 4H/6H-P 3C-N 4 inci kanthi ketebalan 350um Kelas produksi Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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Wafer SiC tipe P 4H/6H-P 3C-N 6 inci ketebalan 350 μm kanthi Orientasi Datar Utama
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Proses TVG ing quartz sapphire BF33 wafer Kaca wafer punching
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Tunggal Crystal Silicon Wafer Si Substrat Tipe N/P Opsional Silicon Carbide Wafer
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Substrat Komposit SiC Tipe N Dia6inch Monokokristalin kualitas dhuwur lan substrat kualitas rendah
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Semi-Insulating SiC ing Si Composite Substrat
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Substrat Komposit Semi-Insulating SiC Dia2inch 4inch 6inch 8inch HPSI
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Sintetis Sapphire boule Monocrystal Sapphire Blank Diameter lan ketebalan bisa disesuaikan
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N-Type SiC ing Si Composite Substrat Dia6inch
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Substrat SiC Dia200mm 4H-N lan HPSI Silicon carbide
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Produksi substrat SiC 3 inci Dia76.2mm 4H-N