Substrat
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2 inch Silicon Carbide Wafer 6H-N Tipe Prime Grade Research Grade Dummy Grade 330μm 430μm Ketebalan
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2 inch silikon karbida substrat 6H-N dua sisi dipoles diameter 50.8mm produksi kelas riset kelas
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p-tipe 4H/6H-P 3C-N TIPE SIC substrate 4 inci 〈111〉± 0,5°Zero MPD
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Substrat SiC tipe P 4H/6H-P 3C-N 4 inch dengan ketebalan 350um Kelas produksi Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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Wafer SiC tipe-P 4H/6H-P 3C-N 6 inci ketebalan 350 μm kanthi Orientasi Datar Utama
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Proses TVG ing quartz sapphire BF33 wafer Kaca wafer punching
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Tunggal Crystal Silicon Wafer Si Substrat Tipe N/P Opsional Silicon Carbide Wafer
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Substrat Komposit SiC Tipe N Dia6inch Monokokristalin kualitas dhuwur lan substrat kualitas rendah
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Semi-Insulating SiC ing Si Composite Substrat
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Substrat Komposit Semi-Insulating SiC Dia2inch 4inch 6inch 8inch HPSI
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Sintetis Sapphire boule Monocrystal Sapphire Blank Diameter lan ketebalan bisa disesuaikan