Substrat
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6 ing Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot tipe 4H Diameter 4inch 6inch Ketebalan 5-10mm Research / Dummy Grade
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6 inch sapphire Boule safir kosong kristal tunggal Al2O3 99.999%
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Sic Substrat Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 inch Silicon Carbide Wafer 6H-N Tipe Prime Grade Research Grade Dummy Grade 330μm 430μm Ketebalan
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2 inch silikon karbida substrat 6H-N dua sisi dipoles diameter 50.8mm produksi kelas riset kelas
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Tipe-p 4H/6H-P 3C-N TYPE SIC substrate 4 inci 〈111〉± 0,5°Zero MPD
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Substrat SiC P-type 4H/6H-P 3C-N 4 inci kanthi ketebalan 350um Kelas produksi Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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Wafer SiC tipe P 4H/6H-P 3C-N 6 inci ketebalan 350 μm kanthi Orientasi Datar Utama
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Proses TVG ing quartz sapphire BF33 wafer Kaca wafer punching
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Tunggal Crystal Silicon Wafer Si Substrat Tipe N/P Opsional Silicon Carbide Wafer