Substrat
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8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
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2 Inch 6H-N Silicon Carbide Substrat Sic Wafer Ganda Dipoles Konduktif Prime Grade Mos Grade
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3 inch Kemurnian Tinggi (Undoped) Silicon Carbide Wafer Semi-Insulating Sic Substrat (HPSl)
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safir dia kristal tunggal, kekerasan dhuwur morhs 9 tahan gores disesuaikan
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Pola Sapphire Substrat PSS 2inch 4inch 6inch ICP dry etching bisa digunakake kanggo chip LED
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2 inch 4 inch 6 inch Patterned Sapphire Substrat (PSS) ing ngendi materi GaN ditanam bisa digunakake kanggo lampu LED
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Wafer berlapis Au, wafer safir, wafer silikon, wafer SiC, 2 inci 4 inci 6 inci, ketebalan lapisan emas 10nm 50nm 100nm
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wafer silikon piring emas (Si Wafer) 10nm 50nm 100nm 500nm Au Konduktivitas Apik banget kanggo LED
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Wafer Silicon Dilapisi Emas 2inch 4inch 6inch Ketebalan lapisan emas: 50nm (± 5nm) utawa ngatur film Coating Au, kemurnian 99.999%
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Wafer AlN-on-NPSS: Lapisan Nitrida Aluminium Kinerja Tinggi ing Substrat Safir Non-Poles kanggo Aplikasi Suhu Dhuwur, Daya Dhuwur, lan RF
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AlN ing FSS 2inch 4inch NPSS / FSS AlN cithakan kanggo area semikonduktor
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Gallium Nitride (GaN) Epitaxial Grown on Sapphire Wafers 4inch 6inch kanggo MEMS