Substrat
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Sapphire Wafer Blank High Purity Raw Sapphire Substrat kanggo Processing
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Kristal Biji Sapphire Square - Substrat Berorientasi Presisi kanggo Pertumbuhan Sapphire Sintetis
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Silicon Carbide (SiC) Substrat Kristal Tunggal – Wafer 10×10mm
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer kanggo MOS utawa SBD
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SiC Epitaxial Wafer kanggo Piranti Daya - 4H-SiC, N-jinis, Kapadhetan Cacat Kurang
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4H-N Tipe SiC Epitaxial Wafer Tegangan Dhuwur Frekuensi Dhuwur
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8inch LNOI (LiNbO3 ing Insulator) Wafer kanggo Modulator Optik Waveguides Sirkuit Terpadu
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LNOI Wafer (Lithium Niobate on Insulator) Telekomunikasi Sensing High Electro-Optic
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3 inch Kemurnian Tinggi (Undoped) Silicon Carbide Wafer Semi-Insulating Sic Substrat (HPSl)
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy Research grade 500um ketebalan
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safir dia kristal tunggal, kekerasan dhuwur morhs 9 tahan gores disesuaikan
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Pola Sapphire Substrat PSS 2inch 4inch 6inch ICP dry etching bisa digunakake kanggo chip LED