Substrat
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Substrat SiC SiC Epi-wafer konduktif/semi tipe 4 6 8 inci
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SiC Epitaxial Wafer kanggo Piranti Daya - 4H-SiC, N-jinis, Kapadhetan Cacat Kurang
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4H-N Tipe SiC Epitaxial Wafer Tegangan Dhuwur Frekuensi Dhuwur
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8inch LNOI (LiNbO3 ing Insulator) Wafer kanggo Modulator Optik Waveguides Sirkuit Terpadu
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LNOI Wafer (Lithium Niobate on Insulator) Telekomunikasi Sensing High Electro-Optic
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3 inch Kemurnian Tinggi (Undoped) Silicon Carbide Wafer Semi-Insulating Sic Substrat (HPSl)
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy Research grade 500um ketebalan
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safir dia kristal tunggal, kekerasan dhuwur morhs 9 tahan gores disesuaikan
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Pola Sapphire Substrat PSS 2inch 4inch 6inch ICP dry etching bisa digunakake kanggo chip LED
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2 inch 4 inch 6 inch Patterned Sapphire Substrat (PSS) ing ngendi materi GaN ditanam bisa digunakake kanggo lampu LED
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate
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Wafer berlapis Au, wafer safir, wafer silikon, wafer SiC, 2 inci 4 inci 6 inci, ketebalan lapisan emas 10nm 50nm 100nm