Substrat
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Proses TVG ing quartz sapphire BF33 wafer Kaca wafer punching
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Tunggal Crystal Silicon Wafer Si Substrat Tipe N/P Opsional Silicon Carbide Wafer
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Substrat Komposit SiC Tipe N Dia6inch Monokokristalin kualitas dhuwur lan substrat kualitas rendah
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Semi-Insulating SiC ing Si Composite Substrat
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Substrat Komposit Semi-Insulating SiC Dia2inch 4inch 6inch 8inch HPSI
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P-jinis SiC substrate SiC wafer Dia2inch produk anyar
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N-Type SiC ing Si Composite Substrat Dia6inch
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Substrat SiC Dia200mm 4H-N lan HPSI Silicon carbide
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Produksi substrat SiC 3 inci Dia76.2mm 4H-N
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SiC substrate P lan D kelas Dia50mm 4H-N 2inch
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TGV Kaca substrat 12 inch wafer Kaca punching
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate