SiC
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4inch wafer SiC Semi-insulting Substrat HPSI SiC Prime Production grade
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3 inch 76.2mm 4H-Semi SiC substrat wafer Silicon Carbide Wafer SiC Semi-menghina
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Substrat SiC 3inch Dia76.2mm HPSI Prime Research lan kelas Dummy
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4H-semi HPSI 2inch SiC substrate wafer Produksi Dummy Research kelas
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Wafer SiC 2 inci 6H utawa 4H Substrat SiC Semi-Insulating Diameter 50.8mm
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy Research grade 500um ketebalan
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8 inch 200mm Silicon Carbide SiC Wafer 4H-N tipe Produksi kelas ketebalan 500um
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2 inch Silicon Carbide Wafers 6H utawa 4H N-jinis utawa Semi-Insulating SiC Substrat
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4H-N 4 inch SiC substrat wafer Silicon Carbide Produksi Dummy kelas Riset
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6inch 150mm Silicon Carbide SiC Wafers 4H-N tipe kanggo MOS utawa SBD Produksi Riset lan Dummy kelas
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8Inch 200mm 4H-N SiC Wafer Conductive dummy kelas riset
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2 inch Silicon Carbide Wafers 6H utawa 4H N-jinis utawa Semi-Insulating SiC Substrat