SiC
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6 ing Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot tipe 4H Diameter 4inch 6inch Ketebalan 5-10mm Research / Dummy Grade
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3 inch High Purity (Undoped)Silicon Carbide Wafers Semi-Insulating Sic Substrat (HPSl)
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Sic Substrat Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 inch Silicon Carbide Wafer 6H-N Tipe Prime Grade Research Grade Dummy Grade 330μm 430μm Ketebalan
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2 inch silikon karbida substrat 6H-N dua sisi dipoles diameter 50.8mm produksi kelas riset kelas
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Substrat Komposit SiC Tipe N Dia6inch Monokokristalin kualitas dhuwur lan substrat kualitas rendah
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Substrat Komposit Semi-Insulating SiC Dia2inch 4inch 6inch 8inch HPSI
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N-Type SiC ing Si Composite Substrat Dia6inch
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Substrat SiC Dia200mm 4H-N lan HPSI Silicon carbide
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Produksi substrat SiC 3 inci Dia76.2mm 4H-N
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SiC substrate P lan D kelas Dia50mm 4H-N 2inch