SiC
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy Research grade 500um ketebalan
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate
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Wafer berlapis Au, wafer safir, wafer silikon, wafer SiC, 2 inci 4 inci 6 inci, ketebalan lapisan emas 10nm 50nm 100nm
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Wafer SiC 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C tipe 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silicon carbide substrate 6H-N Tipe 0.33mm 0.43mm polishing dua sisi konduktivitas termal dhuwur konsumsi daya rendah
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SiC substrate 3inch 350um kekandelan HPSI jinis Prime Grade Dummy kelas
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Silicon Carbide SiC Ingot 6inch tipe N Dummy/Ketebalan kelas prima bisa disesuaikan
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6 ing Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot tipe 4H Diameter 4inch 6inch Ketebalan 5-10mm Research / Dummy Grade
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Sic Substrat Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 inch Silicon Carbide Wafer 6H-N Tipe Prime Grade Research Grade Dummy Grade 330μm 430μm Ketebalan
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2 inch silikon karbida substrat 6H-N dua sisi dipoles diameter 50.8mm produksi kelas riset kelas