SiC
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer kanggo MOS utawa SBD
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SiC Epitaxial Wafer kanggo Piranti Daya - 4H-SiC, N-jinis, Kapadhetan Kurang Cacat
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4H-N Tipe SiC Epitaxial Wafer Tegangan Dhuwur Frekuensi Dhuwur
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3 inch Kemurnian Tinggi (Undoped) Silicon Carbide Wafer Semi-Insulating Sic Substrat (HPSl)
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4H-N 8 inch SiC substrat wafer Silicon Carbide Dummy Research grade 500um ketebalan
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4H-N/6H-N SiC Wafer Reasearch produksi Dummy grade Dia150mm Silicon carbide substrate
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Wafer berlapis Au, wafer safir, wafer silikon, wafer SiC, 2 inci 4 inci 6 inci, ketebalan lapisan emas 10nm 50nm 100nm
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Wafer SiC 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C tipe 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silicon carbide substrate 6H-N Tipe 0.33mm 0.43mm polishing dua sisi konduktivitas termal dhuwur konsumsi daya rendah
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SiC substrate 3inch 350um kekandelan HPSI jinis Prime Grade Dummy kelas
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Silicon Carbide SiC Ingot 6inch tipe N Dummy/Ketebalan kelas prima bisa disesuaikan
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6 ing Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade