Produk
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Substrat tembaga kristal tunggal Cu wafer 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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Wafer Nikel Ni Substrat 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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Ni Substrat/wafer struktur kubik kristal tunggal a=3.25A kepadatan 8.91
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Magnesium kristal tunggal Substrat Mg wafer kemurnian 99,99% 5x5x0.5/1mm 10x10x0.5/1mm20x20x0.5/1mm
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Magnesium Kristal Tunggal Mg wafer DSP Orientasi SSP
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Substrat kristal tunggal logam aluminium dipoles lan diproses kanthi ukuran kanggo manufaktur sirkuit terpadu
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Substrat aluminium Kristal tunggal orientasi substrat aluminium 111 100 111 5 × 5 × 0,5 mm
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Wafer Kaca Kuarsa JGS1 JGS2 BF33 Wafer 8inch 12inch 725 ± 25 um Utawa Disesuaikan
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tabung safir CZmethod metode KY Tahan Suhu Tinggi Al2O3 99.999% kristal tunggal safir
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Tipe-p 4H/6H-P 3C-N TYPE SIC substrate 4 inci 〈111〉± 0,5°Zero MPD
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Substrat SiC P-type 4H/6H-P 3C-N 4 inci kanthi ketebalan 350um Kelas produksi Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade