N-Type SiC ing Si Composite Substrat Dia6inch
| 等级sasmita | U 级 | P级 | D级 |
| Tingkat BPD sing sithik | Kelas Produksi | Kelas Dummy | |
| 直径Dhiameter | 150,0 mm ± 0,25 mm | ||
| 厚度kekandelan | 500 μm ± 25 μm | ||
| 晶片方向Orientasi Wafer | Sumbu mati : 4.0°menuju < 11-20 > ±0.5° kanggo 4H-N Sumbu aktif : <0001>±0.5° kanggo 4H-SI | ||
| 主定位边方向Flat Utama | {10-10}±5.0° | ||
| 主定位边长度Panjang Datar Utama | 47,5 mm ± 2,5 mm | ||
| 边缘Pengecualian pinggiran | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Resistivity | ≥1E5 Ω·cm | ||
| 表面粗糙度Kasar | Polandia Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | ora ana | Kumulatif dawa ≤10mm, siji length≤2mm | |
| Retak dening cahya intensitas dhuwur | |||
| 六方空洞（强光灯观测）* | Area kumulatif ≤1% | Area kumulatif ≤5% | |
| Piring Hex kanthi cahya intensitas dhuwur | |||
| 多型(强光灯观测)* | ora ana | Area kumulatif≤5% | |
| Polytype Area kanthi cahya intensitas dhuwur | |||
| 划痕(强光灯观测)*& | 3 goresan kanggo 1 × wafer diameteripun | 5 goresan kanggo 1 × diameter wafer | |
| Goresan dening cahya intensitas dhuwur | dawa kumulatif | dawa kumulatif | |
| 崩边# Kripik pinggir | ora ana | 5 diijini, ≤1 mm saben | |
| 表面污染物（强光灯观测） | ora ana | ||
| Kontaminasi dening cahya intensitas dhuwur | |||
Diagram rinci
