Substrat
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Diamond-Copper Composite Thermal Management Materials
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HPSI SiC Wafer ≥90% Transmittance Optical Grade kanggo Kacamata AI/AR
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Substrat Semi-Insulating Silicon Carbide (SiC) Kemurnian Tinggi Kanggo Kacamata Ar
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Wafer Epitaxial 4H-SiC kanggo MOSFET Tegangan Tinggi Ultra (100–500 μm, 6 inci)
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SICOI (Silicon Carbide ing Insulator) Wafer SiC Film ON Silicon
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Sapphire Wafer Blank High Purity Raw Sapphire Substrat kanggo Processing
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Kristal Biji Sapphire Square - Substrat Berorientasi Presisi kanggo Pertumbuhan Sapphire Sintetis
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Silicon Carbide (SiC) Substrat Kristal Tunggal – Wafer 10×10mm
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer kanggo MOS utawa SBD
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SiC Epitaxial Wafer kanggo Piranti Daya - 4H-SiC, N-jinis, Kapadhetan Kurang Cacat
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4H-N Tipe SiC Epitaxial Wafer Tegangan Dhuwur Frekuensi Dhuwur
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8inch LNOI (LiNbO3 ing Insulator) Wafer kanggo Modulator Optik Waveguides Sirkuit Terpadu